Jiangxi Haoan Energy Technology Co.,LTD

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1. solar grade silicon ingots for solar cell

mono silicon ingots

Conductivity type: P-type
Dopant: Boron
Resistivity: 1.0-3.0; 2.0-4.0; 3.0-6.0
Oxygen concentration: <1X1018atoms/cm3
Carbon concentration: <5X1016atoms/cm3
Lifetime:over 3

2. 156mm Solar PV mono silicon wafer

156mm mono silicon wafer Detailed information

Length of wafer edge : 8inch: 156mm
Diagonal: 8inch: 200mm
Conductivity type: P-type
Dopant: Boron
Thickness: 200
Resistivity: 1.0-3.0; 2.0-4.0; 3.0-6.0
Oxygen concentration: <1*1018
Carbon ...

3. 125*125mm mono crystal silicon wafer

Length of wafer edge: 6inch; 125mm*125mm
Diagonal: 6inch, 150mm
Conductivity type: P-type
Dopant: Boron
Thickness: 200mm
Resistivity: 1-3 or 3-6
Resistivity: 1-3; 3-6